Photoluminescence of CdTe crystals grown by physical-vapor transport
Identifieur interne : 00CD99 ( Main/Repository ); précédent : 00CD98; suivant : 00CE00Photoluminescence of CdTe crystals grown by physical-vapor transport
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Abstract
High-quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence of CdTe crystals grown by physical-vapor transport</title><author><name sortKey="Palosz, W" uniqKey="Palosz W">W. Palosz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>USBA/NASA.Marshall Space Flight Center, SD46</s1><s2>Huntsville, AL 35812</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Dakota du Sud</region></placeName></affiliation></author><author><name sortKey="Grasza, K" uniqKey="Grasza K">K. Grasza</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>IF PAS</s1><s2>Warsaw</s2><s3>POL</s3><sZ>2 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>IF PAS</wicri:noRegion></affiliation></author><author><name sortKey="Boyd, P R" uniqKey="Boyd P">P. R. Boyd</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AM SRL-SE-EI</s1><s2>Adelphi, MD 20783</s2><s3>JAM</s3><sZ>3 aut.</sZ></inist:fA14><country>Jamaïque</country><wicri:noRegion>AM SRL-SE-EI</wicri:noRegion></affiliation></author><author><name sortKey="Cut, Y" uniqKey="Cut Y">Y. Cut</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fisk University</wicri:noRegion></affiliation></author><author><name sortKey="Wright, G" uniqKey="Wright G">G. Wright</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fisk University</wicri:noRegion></affiliation></author><author><name sortKey="Roy, U N" uniqKey="Roy U">U. N. Roy</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fisk University</wicri:noRegion></affiliation></author><author><name sortKey="Burger, A" uniqKey="Burger A">A. Burger</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Fisk University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0506448</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0506448 INIST</idno><idno type="RBID">Pascal:03-0506448</idno><idno type="wicri:Area/Main/Corpus">00C598</idno><idno type="wicri:Area/Main/Repository">00CD99</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor donor pair</term><term>Binary compounds</term><term>Cadmium tellurides</term><term>Complex defect</term><term>Crystal growth from vapors</term><term>Doping</term><term>Experimental study</term><term>Impurities</term><term>Photoluminescence</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Dopage</term><term>Impureté</term><term>Défaut complexe</term><term>Paire accepteur donneur</term><term>Croissance cristalline en phase vapeur</term><term>Semiconducteur</term><term>Cadmium tellurure</term><term>Composé binaire</term><term>Etude expérimentale</term><term>CdTe</term><term>Cd Te</term><term>7855E</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High-quality CdTe crystals with resistivities higher than 10<sup>8</sup> Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>32</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence of CdTe crystals grown by physical-vapor transport</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>2002 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1></fA09><fA11 i1="01" i2="1"><s1>PALOSZ (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>GRASZA (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOYD (P. R.)</s1></fA11><fA11 i1="04" i2="1"><s1>CUT (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>WRIGHT (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>ROY (U. N.)</s1></fA11><fA11 i1="07" i2="1"><s1>BURGER (A.)</s1></fA11><fA12 i1="01" i2="1"><s1>SIVANANTHAN (S.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DHAR (N. K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>USBA/NASA.Marshall Space Flight Center, SD46</s1><s2>Huntsville, AL 35812</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>IF PAS</s1><s2>Warsaw</s2><s3>POL</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>AM SRL-SE-EI</s1><s2>Adelphi, MD 20783</s2><s3>JAM</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>University of Illinois at Chicago</s1><s2>Chicago, IL</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Army Research Laboratory</s1><s2>Adelphi, MD</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>American Physical Society</s1><s3>USA</s3><s9>patr.</s9></fA18><fA20><s1>747-751</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000119980110280</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0506448</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>High-quality CdTe crystals with resistivities higher than 10<sup>8</sup> Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dopage</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Impureté</s0><s5>06</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Impurities</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Défaut complexe</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Complex defect</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Defecto complejo</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Paire accepteur donneur</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Acceptor donor pair</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Par aceptor dador</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Crystal growth from vapors</s0><s5>13</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>14</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>14</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Cadmium tellurure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Cadmium tellurides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Composé binaire</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Binary compounds</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>17</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>CdTe</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cd Te</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7855E</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>49</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>49</s5></fC07><fN21><s1>335</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>2002 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1><s2>21</s2><s3>San Diego, California USA</s3><s4>2002-11-13</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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